NPN Silicon Bipolar Junction Transistor (BJT) for through-hole mounting in a TO-220-3 package. Features a maximum collector current of 12A and a collector-emitter breakdown voltage of 400V. Offers a maximum power dissipation of 50W and operates across a temperature range of -65°C to 150°C. Includes a transition frequency of 4MHz. Packaged in a tube containing 1000 units.
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Onsemi FJPF13009H1TU technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 700V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 3V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 3V |
| Emitter Base Voltage (VEBO) | 9V |
| Frequency | 4MHz |
| Gain Bandwidth Product | 4MHz |
| Height | 16.07mm |
| hFE Min | 6 |
| Length | 10.36mm |
| Max Collector Current | 12A |
| Max Frequency | 4MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 50W |
| RoHS Compliant | Yes |
| Series | FJPF13009 |
| Transition Frequency | 4MHz |
| Weight | 2.27g |
| Width | 4.9mm |
| RoHS | Compliant |
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