NPN silicon bipolar junction transistor (BJT) in a TO-220-3 through-hole package. Features a maximum collector current of 12A and a collector-emitter voltage (VCEO) of 400V, with a collector-base voltage (VCBO) of 700V. Offers a transition frequency of 4MHz and a minimum hFE of 6. Power dissipation is rated at 50W, with operating temperatures ranging from -65°C to 150°C. This RoHS compliant component is lead-free.
Frequency4MHz
PackageTO-220-3
Current Rating12A
MountingThrough Hole
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Technical Specifications
Onsemi FJPF13009H2TU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 700V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 12A |
| Emitter Base Voltage (VEBO) | 9V |
| Frequency | 4MHz |
| Gain Bandwidth Product | 4MHz |
| hFE Min | 6 |
| Lead Free | Lead Free |
| Max Collector Current | 12A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 50W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 4MHz |
| DC Rated Voltage | 400V |
| Weight | 2.27g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJPF13009H2TU Datasheet
Download the complete datasheet for Onsemi FJPF13009H2TU to view detailed technical specifications.
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