NPN Silicon Bipolar Junction Transistor (BJT) in a TO-220-3 package. Features a 400V Collector-Emitter Breakdown Voltage (VCEO) and a 700V Collector Base Voltage (VCBO). Offers a continuous collector current rating of 4A with a maximum power dissipation of 30W. Operates with a transition frequency of 4MHz and a minimum hFE of 8. Through-hole mounting, lead-free, and RoHS compliant.
Frequency4MHz
PackageTO-220-3
Current Rating4A
MountingThrough Hole
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Technical Specifications
Onsemi FJPF3305H2TU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 700V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 9V |
| Frequency | 4MHz |
| Gain Bandwidth Product | 4MHz |
| hFE Min | 8 |
| Lead Free | Lead Free |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 30W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 30W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 4MHz |
| DC Rated Voltage | 400V |
| Weight | 2.27g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJPF3305H2TU Datasheet
Download the complete datasheet for Onsemi FJPF3305H2TU to view detailed technical specifications.
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