NPN Silicon Bipolar Junction Transistor (BJT) designed for through-hole mounting in a TO-220-3 package. Features a maximum collector current of 3A and a collector-emitter breakdown voltage of 800V. Offers a transition frequency of 15MHz, a maximum power dissipation of 40W, and operates within a temperature range of -55°C to 150°C. This lead-free and RoHS-compliant component is supplied in a rail/tube package.
Frequency15MHz
PackageTO-220-3
Current Rating3A
MountingThrough Hole
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Technical Specifications
Onsemi FJPF5027OTU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 1.1kV |
| Collector Emitter Breakdown Voltage | 800V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 800V |
| Collector-emitter Voltage-Max | 2V |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 15MHz |
| Gain Bandwidth Product | 15MHz |
| Height | 15.87mm |
| hFE Min | 10 |
| Lead Free | Lead Free |
| Length | 10.16mm |
| Max Collector Current | 3A |
| Max Frequency | 15MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 40W |
| RoHS Compliant | Yes |
| Transition Frequency | 15MHz |
| DC Rated Voltage | 800V |
| Weight | 2.27g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJPF5027OTU Datasheet
Download the complete datasheet for Onsemi FJPF5027OTU to view detailed technical specifications.
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