NPN bipolar junction transistor (BJT) designed for through-hole mounting in a TO-220-3 package. Features a 500V collector-emitter breakdown voltage and a 5A continuous collector current rating. Offers a maximum power dissipation of 40W and a transition frequency of 14MHz. Operates across a wide temperature range from -55°C to 150°C. This component is lead-free and RoHS compliant.
Frequency14MHz
PackageTO-220-3
Current Rating5A
MountingThrough Hole
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Technical Specifications
Onsemi FJPF5321TU technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 800V |
| Collector Emitter Breakdown Voltage | 500V |
| Collector Emitter Voltage (VCEO) | 500V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 5A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 14MHz |
| Gain Bandwidth Product | 14MHz |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 40W |
| RoHS Compliant | Yes |
| Transition Frequency | 14MHz |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJPF5321TU Datasheet
Download the complete datasheet for Onsemi FJPF5321TU to view detailed technical specifications.
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