NPN Epitaxial Silicon Transistor for surface mount applications, featuring a 400V collector-emitter breakdown voltage and 300mA maximum collector current. This component offers a maximum collector-emitter saturation voltage of 750mV and a minimum hFE of 50. Encased in a SOT-223 package, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 2W. Supplied on a 4000-unit tape and reel, this lead-free and RoHS compliant transistor is designed for high-voltage applications.
Onsemi FJT44TF technical specifications.
| Package/Case | SOT-223 |
| Collector Base Voltage (VCBO) | 500V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 750mV |
| Collector-emitter Voltage-Max | 750mV |
| Current Rating | 300mA |
| Emitter Base Voltage (VEBO) | 6V |
| Height | 1.6mm |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Breakdown Voltage | 400V |
| Max Collector Current | 300mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 400V |
| Weight | 0.188g |
| Width | 3.5mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FJT44TF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
