NPN Epitaxial Silicon Transistor for surface mount applications. Features a 120V Collector-Emitter Voltage (VCEO) and 120V Collector Base Voltage (VCBO). Offers a maximum collector current of 50mA and a minimum DC current gain (hFE) of 200. Operates with a transition frequency of 110MHz and a maximum power dissipation of 300mW. Packaged in SOT-23 for tape and reel, with a 3000-unit reel quantity. RoHS compliant and lead-free.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi FJV1845EMTF datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi FJV1845EMTF technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 120V |
| Collector Emitter Saturation Voltage | 70mV |
| Collector Emitter Voltage (VCEO) | 120V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 1.04mm |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 120V |
| Max Collector Current | 50mA |
| Max Frequency | 110MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 110MHz |
| DC Rated Voltage | 120V |
| Weight | 0.03g |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FJV1845EMTF to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
