NPN Epitaxial Silicon Transistor for surface mount applications. Features a 120V Collector-Emitter Voltage (VCEO) and 120V Collector Base Voltage (VCBO). Offers a maximum collector current of 50mA and a minimum DC current gain (hFE) of 200. Operates with a transition frequency of 110MHz and a maximum power dissipation of 300mW. Packaged in SOT-23 for tape and reel, with a 3000-unit reel quantity. RoHS compliant and lead-free.
Frequency100MHz
PackageSOT-23
Current Rating50mA
MountingSurface Mount
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Technical Specifications
Onsemi FJV1845EMTF technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
120V
Collector Emitter Breakdown Voltage
120V
Collector Emitter Saturation Voltage
70mV
Collector Emitter Voltage (VCEO)
120V
Collector-emitter Voltage-Max
300mV
Current Rating
50mA
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
1.04mm
hFE Min
200
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
120V
Max Collector Current
50mA
Max Frequency
110MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
300mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
110MHz
DC Rated Voltage
120V
Weight
0.03g
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FJV1845EMTF Datasheet
Download the complete datasheet for Onsemi FJV1845EMTF to view detailed technical specifications.
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