PNP Epitaxial Silicon Transistor, surface mountable in a SOT-23-3 package. Features a 50V collector-emitter breakdown voltage and 50V collector-emitter voltage (VCEO). Offers a continuous collector current of -100mA and a transition frequency of 200MHz. Includes integrated bias resistor, operates from -55°C to 150°C, and has a power dissipation of 200mW. This RoHS compliant component is supplied on a 3000-piece tape and reel.
PackageSOT-23-3
Current Rating-100mA
MountingSurface Mount
PolarityPNP
Quick Jump:
Technical Specifications
Onsemi FJV4101RMTF technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Continuous Collector Current | -100mA |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -10V |
| Height | 0.93mm |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Length | 2.92mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 200mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -50V |
| Weight | 0.03g |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJV4101RMTF Datasheet
Download the complete datasheet for Onsemi FJV4101RMTF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
