NPN Bipolar Junction Transistor (BJT) in SOT-23 package, designed for high voltage applications. Features a Collector-Emitter Breakdown Voltage of 350V, Max Collector Current of 500mA, and a transition frequency of 50MHz. Offers a minimum hFE of 25 and a low Collector-Emitter Saturation Voltage of 500mV. This surface mount component operates within a temperature range of -55°C to 150°C and is supplied in a 3000-piece tape and reel, meeting RoHS and Lead Free standards.
Frequency50MHz
PackageSOT-23
MountingSurface Mount
PolarityNPN
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Technical Specifications
Onsemi FJV42MTF technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 350V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 350V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 350V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| Weight | 0.03g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJV42MTF Datasheet
Download the complete datasheet for Onsemi FJV42MTF to view detailed technical specifications.
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