PNP Bipolar Junction Transistor (BJT) for surface mount applications in a SOT-323 package. Features a 30V collector-emitter breakdown voltage and a 500mA maximum collector current. Offers a minimum DC current gain (hFE) of 70 and a transition frequency of 200MHz. Operates within a temperature range of -55°C to 150°C with 150mW power dissipation. This RoHS compliant component is supplied on tape and reel.
Frequency200MHz
PackageSOT-323
Current Rating-500mA
MountingSurface Mount
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Technical Specifications
Onsemi FJX1182OTF technical specifications.
General
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | 35V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -100mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 70 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -30V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJX1182OTF Datasheet
Download the complete datasheet for Onsemi FJX1182OTF to view detailed technical specifications.
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