PNP Epitaxial Silicon Transistor, designed for surface mount applications in a SOT-323 package. Features a maximum collector current of 500mA and a collector-emitter voltage of 30V. Offers a transition frequency of 200MHz, a minimum hFE of 70, and a maximum power dissipation of 150mW. Operates across a wide temperature range from -55°C to 150°C, with lead-free and RoHS compliance.
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Onsemi FJX1182YTF technical specifications.
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | -35V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -100mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 70 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -30V |
| Weight | 0.03g |
| RoHS | Compliant |
No datasheet is available for this part.
