PNP Epitaxial Silicon Transistor for surface mount applications. Features a maximum collector current of 600mA and a collector-emitter voltage of 60V. Offers a transition frequency of 200MHz and a minimum hFE of 100. Packaged in a SOT-323 case, this RoHS compliant component operates up to 150°C with a power dissipation of 325mW.
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Onsemi FJX2907ATF technical specifications.
| Package/Case | SOT-323 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -1.6V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 1.6V |
| Current Rating | -600mA |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| Height | 0.9mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 600mA |
| Max Frequency | 200MHz |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 325mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 325mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -60V |
| Weight | 0.03g |
| Width | 1.25mm |
| RoHS | Compliant |
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