PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 40V collector-emitter breakdown voltage and a maximum collector current of 150mA. Operates with a transition frequency of 250MHz and a minimum hFE of 100. Designed for a wide temperature range from -55°C to 150°C, with a power dissipation of 150mW. Packaged in tape and reel, this lead-free and RoHS compliant component is ideal for high-frequency switching and amplification circuits.
Frequency250MHz
Current Rating-150mA
MountingSurface Mount
PolarityPNP
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Technical Specifications
Onsemi FJYF2906TF technical specifications.
General
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -150mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 150mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 150mW |
| RoHS Compliant | Yes |
| Series | FJYF2906 |
| Transition Frequency | 250MHz |
| DC Rated Voltage | -40V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FJYF2906TF Datasheet
Download the complete datasheet for Onsemi FJYF2906TF to view detailed technical specifications.
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