Dual NPN/PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a 250MHz transition frequency, 500mA max collector current, and 30V collector-emitter breakdown voltage. Operates across a -55°C to 150°C temperature range with 700mW power dissipation. Supplied in a 3000-piece tape and reel package.
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Onsemi FMB2227A technical specifications.
| Package/Case | SOIC |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 1.4V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 1.4V |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| Height | 900um |
| hFE Min | 75 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 500mA |
| Max Frequency | 250MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 700mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 250MHz |
| Weight | 0.036g |
| RoHS | Compliant |
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