NPN Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a 160V collector-emitter breakdown voltage and 600mA maximum collector current. Operates with a 300MHz transition frequency and a minimum hFE of 80. Packaged in SOT-23-6 for surface mounting, this component offers a wide operating temperature range from -55°C to 150°C and is RoHS compliant.
Frequency300MHz
PackageSOT-23-6
Current Rating600mA
MountingSurface Mount
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Technical Specifications
Onsemi FMB5551 technical specifications.
General
Package/Case
SOT-23-6
Collector Base Voltage (VCBO)
180V
Collector Emitter Breakdown Voltage
160V
Collector Emitter Saturation Voltage
200mV
Collector Emitter Voltage (VCEO)
160V
Collector-emitter Voltage-Max
200mV
Current Rating
600mA
Emitter Base Voltage (VEBO)
6V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
1.12mm
hFE Min
80
Lead Free
Lead Free
Length
3mm
Max Breakdown Voltage
160V
Max Collector Current
600mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
700mW
Mount
Surface Mount
Number of Elements
2
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
700mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
300MHz
DC Rated Voltage
160V
Weight
0.036g
Width
1.68mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FMB5551 Datasheet
Download the complete datasheet for Onsemi FMB5551 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.