PNP Bipolar Junction Transistor (BJT) featuring a 50MHz gain bandwidth product and 50MHz transition frequency. This surface mount device offers a maximum collector current of 500mA and a collector-emitter voltage of 80V. With a minimum hFE of 100 and a collector-emitter saturation voltage of 250mV, it is suitable for general-purpose amplification. Packaged in a SOT-23-6, this lead-free, RoHS compliant component operates from -55°C to 150°C and is supplied on a 3000-piece tape and reel.
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Onsemi FMBA56 technical specifications.
| Package/Case | SOT-23-6 |
| Collector Base Voltage (VCBO) | -80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -4V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| Height | 1mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 3mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Frequency | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700mW |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 700mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -80V |
| Weight | 0.036g |
| Width | 1.7mm |
| RoHS | Compliant |
No datasheet is available for this part.
