The FMG2G300US60E is a 600V insulated gate bipolar transistor (IGBT) module from Onsemi. It features a collector-emitter breakdown voltage of 600V and a maximum collector current of 300A. The module is designed for chassis mount and panel applications and operates within a temperature range of -40°C to 150°C. It is compliant with RoHS regulations and is available in a module package.
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Onsemi FMG2G300US60E technical specifications.
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.7V |
| Current Rating | 300A |
| Input | Standard |
| Lead Free | Lead Free |
| Max Collector Current | 300A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 892W |
| Mount | Chassis Mount, Panel |
| NTC Thermistor | No |
| Package Quantity | 10 |
| Packaging | Box |
| Power Dissipation | 892W |
| RoHS Compliant | Yes |
| DC Rated Voltage | 600V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FMG2G300US60E to view detailed technical specifications.
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