PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector current of 1A and a collector-emitter voltage of 30V. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 100MHz. Packaged in SOT-23 for tape and reel distribution, with a maximum power dissipation of 500mW. Operates across a wide temperature range from -55°C to 150°C.
Frequency100MHz
PackageSOT-23
Current Rating-1A
MountingSurface Mount
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Technical Specifications
Onsemi FMMT549 technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
-35V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
-750mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
750mV
Current Rating
-1A
Emitter Base Voltage (VEBO)
-5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
0.97mm
hFE Min
100
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
30V
Max Collector Current
1A
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
-30V
Weight
0.03g
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FMMT549 Datasheet
Download the complete datasheet for Onsemi FMMT549 to view detailed technical specifications.
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