The FP7G50US60 is a 600V insulated gate bipolar transistor (IGBT) module from Onsemi. It features a maximum collector current of 50A and a maximum power dissipation of 250W. The module is designed for chassis mount applications and has a maximum operating temperature of 125°C. It is RoHS compliant and available in a package quantity of 5.
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Onsemi FP7G50US60 technical specifications.
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.8V |
| Input | Standard |
| Input Capacitance | 2.92nF |
| Max Collector Current | 50A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 250W |
| Mount | Chassis Mount, Screw |
| NTC Thermistor | No |
| Package Quantity | 5 |
| Packaging | Rail/Tube |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | Power-SPM™ |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FP7G50US60 to view detailed technical specifications.
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