PNP Bipolar Junction Transistor (BJT) in a TO-226 package, designed for through-hole mounting. Features a 60V collector-emitter breakdown voltage and a maximum collector current of 3A. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 75MHz. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1W. This RoHS compliant component is supplied in bulk packaging.
Frequency75MHz
PackageTO-226
Current Rating-3A
MountingThrough Hole
Quick Jump:
Chat with Datasheet
Sponsored by
Sign in to ask questions about the Onsemi FPN660 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Technical Specifications
Onsemi FPN660 technical specifications.
General
| Package/Case | TO-226 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 450mV |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 75MHz |
| Gain Bandwidth Product | 75MHz |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1500 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 1W |
| RoHS Compliant | Yes |
| Transition Frequency | 75MHz |
| DC Rated Voltage | -60V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FPN660 Datasheet
Download the complete datasheet for Onsemi FPN660 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
Product Images
