NPN Bipolar Junction Transistor (BJT) for RF applications, featuring a 650MHz transition frequency and gain bandwidth product. This through-hole component offers a 25V collector-emitter breakdown voltage and a 50mA continuous collector current. Housed in a TO-92 package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 350mW. Lead-free and RoHS compliant.
Frequency650MHz
PackageTO-92
Current Rating50mA
MountingThrough Hole
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Technical Specifications
Onsemi FPNH10 technical specifications.
General
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 25V |
| Continuous Collector Current | 50mA |
| Current Rating | 50mA |
| Emitter Base Voltage (VEBO) | 3V |
| Frequency | 650MHz |
| Gain Bandwidth Product | 650MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 50mA |
| Max Frequency | 650MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 350mW |
| RoHS Compliant | Yes |
| Transition Frequency | 650MHz |
| DC Rated Voltage | 25V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FPNH10 Datasheet
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