The FQA10N80_F109 is an N-channel power MOSFET from Onsemi, with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 240W and a drain to source breakdown voltage of 800V. The device features a drain to source resistance of 1.05 ohms and a continuous drain current of 9.8A. It is available in a through-hole package and is RoHS compliant.
MountingThrough Hole
PolarityN-CHANNEL
Power240W
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Technical Specifications
Onsemi FQA10N80_F109 technical specifications.
General
| Continuous Drain Current (ID) | 9.8A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.05R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 75ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.7nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 240W |
| Mount | Through Hole |
| Package Quantity | 450 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 240W |
| Rds On Max | 1.05R |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 125ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQA10N80_F109 Datasheet
Download the complete datasheet for Onsemi FQA10N80_F109 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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