FQA11N90-F109

N-Channel Power MOSFET featuring 900V drain-to-source breakdown voltage and 11.4A continuous drain current. This single-element transistor offers a low 960mΩ drain-to-source resistance and a maximum power dissipation of 300W. Designed for through-hole mounting in TO-3P or TO-3PN packages, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. Key switching characteristics include a 65ns turn-on delay and a 90ns fall time.