The FQA11N90C is a high-power N-channel MOSFET from Onsemi, featuring a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 300W and a maximum drain to source breakdown voltage of 900V. The device is lead-free and RoHS compliant, with a package quantity of 30 units per rail/Tube packaging. The FQA11N90C has a maximum continuous drain current of 11A and a maximum drain to source resistance of 1.4R.
Current Rating11A
MountingThrough Hole
PolarityN-CHANNEL
Power300W
Quick Jump:
Technical Specifications
Onsemi FQA11N90C technical specifications.
General
| Continuous Drain Current (ID) | 11A |
| Current Rating | 11A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 900V |
| Fall Time | 85ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3.29nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 1.1R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 130ns |
| DC Rated Voltage | 900V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQA11N90C Datasheet
Download the complete datasheet for Onsemi FQA11N90C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
