The FQA13N80 is an N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 300W and a drain to source breakdown voltage of 800V. The device is RoHS compliant and features a through hole mount. It has a maximum current rating of 12.6A and a drain to source resistance of 750mR. The FQA13N80 is a lead free device with a package quantity of 30 and a packaging type of rail/tube.
Current Rating12.6A
MountingThrough Hole
PolarityN-CHANNEL
Power300W
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Technical Specifications
Onsemi FQA13N80 technical specifications.
General
| Continuous Drain Current (ID) | 12.6A |
| Current Rating | 12.6A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 750mR |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 750mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 155ns |
| DC Rated Voltage | 800V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQA13N80 Datasheet
Download the complete datasheet for Onsemi FQA13N80 to view detailed technical specifications.
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