N-Channel Power MOSFET featuring a 60V drain-source breakdown voltage and a continuous drain current of 170A. This single-element device offers a low drain-source on-resistance of 5.6mΩ, a maximum power dissipation of 375W, and operates within a temperature range of -55°C to 175°C. Key switching characteristics include a turn-on delay time of 85ns and a fall time of 430ns. Packaged in a TO-3P for through-hole mounting, this RoHS compliant component is supplied in a rail/tube format.
Current Rating170A
MountingThrough Hole
PolarityN-CHANNEL
Power375W
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Technical Specifications
Onsemi FQA170N06 technical specifications.
General
| Continuous Drain Current (ID) | 170A |
| Current Rating | 170A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 5.6mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 5.6MR |
| Element Configuration | Single |
| Fall Time | 430ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 18.9mm |
| Input Capacitance | 9.35nF |
| Lead Free | Lead Free |
| Length | 15.8mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 375W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 375W |
| Radiation Hardening | No |
| Rds On Max | 5.6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 260ns |
| Turn-On Delay Time | 85ns |
| DC Rated Voltage | 60V |
| Weight | 6.401g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQA170N06 Datasheet
Download the complete datasheet for Onsemi FQA170N06 to view detailed technical specifications.
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