FQA19N60

N-channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 18.5A continuous drain current. This through-hole component offers a low 380mΩ drain-to-source resistance (Rds On Max) and a maximum power dissipation of 300W. Operating across a wide temperature range from -55°C to 150°C, it includes fast switching characteristics with turn-on delay of 65ns and fall time of 135ns. The MOSFET is RoHS compliant and packaged in a TO-3P package.