N-channel Power MOSFET featuring 500V drain-source breakdown voltage and 24A continuous drain current. This single-element transistor offers a low 200mΩ drain-source on-resistance and 290W maximum power dissipation. Designed for through-hole mounting in a TO-3P package, it operates from -55°C to 150°C. Key switching characteristics include an 80ns turn-on delay and 155ns fall time, with a 4.5nF input capacitance.
Current Rating24A
MountingThrough Hole
PolarityN-CHANNEL
Power290W
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Technical Specifications
Onsemi FQA24N50 technical specifications.
General
| Continuous Drain Current (ID) | 24A |
| Current Rating | 24A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 200mR |
| Dual Supply Voltage | 500V |
| Element Configuration | Single |
| Fall Time | 155ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 18.9mm |
| Input Capacitance | 4.5nF |
| Lead Free | Lead Free |
| Length | 15.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 290W |
| Mount | Through Hole |
| Nominal Vgs | 5V |
| Number of Channels | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 290W |
| Rds On Max | 200mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 200ns |
| Turn-On Delay Time | 80ns |
| DC Rated Voltage | 500V |
| Weight | 6.401g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQA24N50 Datasheet
Download the complete datasheet for Onsemi FQA24N50 to view detailed technical specifications.
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