The FQA28N15_F109 is an N-CHANNEL MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 33A and a drain to source breakdown voltage of 150V. The device features a drain to source resistance of 90mR and a maximum power dissipation of 227W. It is packaged in a through hole package and is RoHS compliant.
MountingThrough Hole
PolarityN-CHANNEL
Power277W
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Technical Specifications
Onsemi FQA28N15_F109 technical specifications.
General
| Continuous Drain Current (ID) | 33A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 115ns |
| Gate to Source Voltage (Vgs) | 25V |
| Input Capacitance | 1.6nF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 227W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 277W |
| Radiation Hardening | No |
| Rds On Max | 90mR |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 17ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQA28N15_F109 Datasheet
Download the complete datasheet for Onsemi FQA28N15_F109 to view detailed technical specifications.
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