The FQA35N40 is a N-CHANNEL MOSFET with a continuous drain current of 35A and a drain to source breakdown voltage of 400V. It has a drain to source resistance of 105mR and a maximum power dissipation of 310W. The device is packaged in a through hole package and is RoHS compliant. It operates over a temperature range of -55°C to 150°C.
Current Rating35A
MountingThrough Hole
PolarityN-CHANNEL
Power310W
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Technical Specifications
Onsemi FQA35N40 technical specifications.
General
| Continuous Drain Current (ID) | 35A |
| Current Rating | 35A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 105mR |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 190ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 5.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 310W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 310W |
| Rds On Max | 105mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 220ns |
| DC Rated Voltage | 400V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQA35N40 Datasheet
Download the complete datasheet for Onsemi FQA35N40 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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