FQA65N20

N-Channel MOSFET, 200V, 65A, 32mR, TO-3P

N-Channel Power MOSFET featuring 200V drain-source breakdown voltage and 65A continuous drain current. This single-element MOSFET offers a low on-resistance of 32mΩ at a 10V gate-source voltage. With a maximum power dissipation of 310W and a maximum operating temperature of 150°C, it is suitable for demanding applications. The component is packaged in a TO-3P through-hole mount and is RoHS compliant.

Current Rating65A

MountingThrough Hole

PolarityN-CHANNEL

Power310W

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Technical Specifications

Onsemi FQA65N20 technical specifications.

General

Continuous Drain Current (ID)	65A
Current Rating	65A
Drain to Source Breakdown Voltage	200V
Drain to Source Resistance	32mR
Drain to Source Voltage (Vdss)	600V
Element Configuration	Single
Fall Time	275ns
Gate to Source Voltage (Vgs)	30V
Height	18.9mm
Input Capacitance	2.25nF
Lead Free	Lead Free
Length	15.8mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	310W
Mount	Through Hole
Package Quantity	30
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	310W
Radiation Hardening	No
Rds On Max	260mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	SuperFET™
Threshold Voltage	5V
Turn-Off Delay Time	340ns
Turn-On Delay Time	120ns
DC Rated Voltage	200V
Weight	6.401g
Width	5mm