The FQA6N80_F109 is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 185W and a continuous drain current of 6.3A. The device is packaged in a through-hole package and is RoHS compliant. It features a drain to source breakdown voltage of 800V and a drain to source resistance of 1.95R.
MountingThrough Hole
PolarityN-CHANNEL
Power185W
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Technical Specifications
Onsemi FQA6N80_F109 technical specifications.
General
| Continuous Drain Current (ID) | 6.3A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.95R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.5nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 185W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 185W |
| Rds On Max | 1.95R |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 65ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQA6N80_F109 Datasheet
Download the complete datasheet for Onsemi FQA6N80_F109 to view detailed technical specifications.
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