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Technical Specifications
Onsemi FQA6N80_F109 technical specifications.
General
Continuous Drain Current (ID)
6.3A
Drain to Source Breakdown Voltage
800V
Drain to Source Resistance
1.95R
Drain to Source Voltage (Vdss)
800V
Fall Time
45ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
1.5nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
185W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
185W
Rds On Max
1.95R
RoHS Compliant
Yes
Series
QFET™
Turn-Off Delay Time
65ns
Compliance
RoHS
Compliant
Datasheet
Onsemi FQA6N80_F109 Datasheet
Download the complete datasheet for Onsemi FQA6N80_F109 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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