N-Channel Power MOSFET featuring 900V drain-to-source breakdown voltage and 6A continuous drain current. This single-element transistor offers a low 2.3 Ohm drain-to-source resistance (Rds On Max) and a maximum power dissipation of 198W. Designed for through-hole mounting in a TO-3P/TO-3PN package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 35ns turn-on delay, 55ns turn-off delay, and 60ns fall time.
MountingThrough Hole
PolarityN-CHANNEL
Power198W
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Technical Specifications
Onsemi FQA6N90C-F109 technical specifications.
General
Continuous Drain Current (ID)
6A
Drain to Source Breakdown Voltage
900V
Drain to Source Resistance
2.3R
Drain to Source Voltage (Vdss)
900V
Element Configuration
Single
Fall Time
60ns
Gate to Source Voltage (Vgs)
30V
Height
18.9mm
Input Capacitance
1.77nF
Length
15.8mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
198W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
198W
Rds On Max
2.3R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
QFET®
Threshold Voltage
5V
Turn-Off Delay Time
55ns
Turn-On Delay Time
35ns
Weight
6.401g
Width
5mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FQA6N90C-F109 Datasheet
Download the complete datasheet for Onsemi FQA6N90C-F109 to view detailed technical specifications.
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