FQA6N90C-F109

N-Channel Power MOSFET featuring 900V drain-to-source breakdown voltage and 6A continuous drain current. This single-element transistor offers a low 2.3 Ohm drain-to-source resistance (Rds On Max) and a maximum power dissipation of 198W. Designed for through-hole mounting in a TO-3P/TO-3PN package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 35ns turn-on delay, 55ns turn-off delay, and 60ns fall time.