ONSEMI

FQA70N10

Datasheet

N-Channel MOSFET, 100V, 70A, 23mR, TO-3P

Onsemi

FQA70N10

Name: FQA70N10 Onsemi
Brand: Onsemi
SKU: FQA70N10

N-Channel MOSFET, 100V, 70A, 23mR, TO-3P

N-channel Power MOSFET featuring 100V drain-source breakdown voltage and a 70A continuous drain current. This QFET® series device offers a low 23mΩ drain-source on-resistance at a nominal 4V gate-source voltage. With a maximum power dissipation of 214W and an operating temperature range of -55°C to 175°C, it is suitable for demanding applications. The TO-3P package facilitates through-hole mounting.

Current Rating70A

MountingThrough Hole

PolarityN-CHANNEL

Power214W

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Technical Specifications

Onsemi FQA70N10 technical specifications.

General

Continuous Drain Current (ID)	70A
Current Rating	70A
Drain to Source Breakdown Voltage	100V
Drain to Source Resistance	25mR
Drain to Source Voltage (Vdss)	100V
Drain-source On Resistance-Max	23mR
Dual Supply Voltage	100V
Element Configuration	Single
Fall Time	160ns
Gate to Source Voltage (Vgs)	25V
Height	18.9mm
Input Capacitance	3.3nF
Lead Free	Lead Free
Length	15.8mm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	214W
Mount	Through Hole
Nominal Vgs	4V
Package Quantity	30
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	214W
Radiation Hardening	No
Rds On Max	23mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	QFET®
Threshold Voltage	4V
Turn-Off Delay Time	130ns
Turn-On Delay Time	30ns
DC Rated Voltage	100V
Weight	6.401g
Width	5mm