N-channel Power MOSFET featuring 100V drain-source breakdown voltage and a 70A continuous drain current. This QFET® series device offers a low 23mΩ drain-source on-resistance at a nominal 4V gate-source voltage. With a maximum power dissipation of 214W and an operating temperature range of -55°C to 175°C, it is suitable for demanding applications. The TO-3P package facilitates through-hole mounting.
Current Rating70A
MountingThrough Hole
PolarityN-CHANNEL
Power214W
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Technical Specifications
Onsemi FQA70N10 technical specifications.
General
Continuous Drain Current (ID)
70A
Current Rating
70A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
25mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
23mR
Dual Supply Voltage
100V
Element Configuration
Single
Fall Time
160ns
Gate to Source Voltage (Vgs)
25V
Height
18.9mm
Input Capacitance
3.3nF
Lead Free
Lead Free
Length
15.8mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
214W
Mount
Through Hole
Nominal Vgs
4V
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
214W
Radiation Hardening
No
Rds On Max
23mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
QFET®
Threshold Voltage
4V
Turn-Off Delay Time
130ns
Turn-On Delay Time
30ns
DC Rated Voltage
100V
Weight
6.401g
Width
5mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FQA70N10 Datasheet
Download the complete datasheet for Onsemi FQA70N10 to view detailed technical specifications.
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