The FQA7N80_F109 is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 800V and a continuous drain current of 7.2A. The device is packaged in a through-hole package and is RoHS compliant. It is suitable for high-power applications requiring a high level of current and voltage handling.
Onsemi FQA7N80_F109 technical specifications.
| Continuous Drain Current (ID) | 7.2A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.5R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 55ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.85nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 198W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 198W |
| Rds On Max | 1.5R |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 95ns |
| RoHS | Compliant |
No datasheet is available for this part.
