N-Channel MOSFET, 800V Vdss, 7A Continuous Drain Current, 1.9Ω Rds On. Features 198W Max Power Dissipation, 150°C Max Operating Temperature, and 30V Gate to Source Voltage. This single element transistor offers fast switching with 35ns turn-on and 50ns turn-off delay times. Packaged in a TO-3PN 3L through-hole mount, it is RoHS compliant.
MountingThrough Hole
PolarityN-CHANNEL
Power198W
Quick Jump:
Technical Specifications
Onsemi FQA7N80C_F109 technical specifications.
General
| Continuous Drain Current (ID) | 7A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.9R |
| Drain to Source Voltage (Vdss) | 800V |
| Element Configuration | Single |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 18.9mm |
| Input Capacitance | 1.68nF |
| Length | 15.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 198W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 198W |
| Rds On Max | 1.9R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 35ns |
| Weight | 6.401g |
| Width | 5mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQA7N80C_F109 Datasheet
Download the complete datasheet for Onsemi FQA7N80C_F109 to view detailed technical specifications.
No datasheet is available for this part.
Product Images
