N-channel Power MOSFET featuring 1000V drain-source breakdown voltage and 8A continuous drain current. This single-element MOSFET offers a low 1.45 Ohm drain-source on-resistance and 225W maximum power dissipation. Designed for through-hole mounting in a TO-3P package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 50ns turn-on delay and 80ns fall time, with a 3.22nF input capacitance.
Current Rating8A
MountingThrough Hole
PolarityN-CHANNEL
Power225W
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Technical Specifications
Onsemi FQA8N100C technical specifications.
General
Continuous Drain Current (ID)
8A
Current Rating
8A
Drain to Source Breakdown Voltage
1kV
Drain to Source Resistance
1.45R
Drain to Source Voltage (Vdss)
1kV
Drain-source On Resistance-Max
1.45R
Element Configuration
Single
Fall Time
80ns
Gate to Source Voltage (Vgs)
30V
Height
18.9mm
Input Capacitance
3.22nF
Lead Free
Lead Free
Length
15.8mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
225W
Mount
Through Hole
Number of Channels
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
225W
Rds On Max
1.45R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
QFET®
Threshold Voltage
5V
Turn-Off Delay Time
122ns
Turn-On Delay Time
50ns
DC Rated Voltage
1kV
Weight
6.401g
Width
5mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FQA8N100C Datasheet
Download the complete datasheet for Onsemi FQA8N100C to view detailed technical specifications.
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