N-channel Power MOSFET featuring 1000V drain-source breakdown voltage and 8A continuous drain current. This single-element MOSFET offers a low 1.45 Ohm drain-source on-resistance and 225W maximum power dissipation. Designed for through-hole mounting in a TO-3P package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 50ns turn-on delay and 80ns fall time, with a 3.22nF input capacitance.
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Onsemi FQA8N100C technical specifications.
| Continuous Drain Current (ID) | 8A |
| Current Rating | 8A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 1.45R |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 1.45R |
| Element Configuration | Single |
| Fall Time | 80ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 18.9mm |
| Input Capacitance | 3.22nF |
| Lead Free | Lead Free |
| Length | 15.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 225W |
| Rds On Max | 1.45R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 122ns |
| Turn-On Delay Time | 50ns |
| DC Rated Voltage | 1kV |
| Weight | 6.401g |
| Width | 5mm |
| RoHS | Compliant |
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