The FQA8N80 is an N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a drain to source breakdown voltage of 800V and a continuous drain current of 8.4A. The device features a drain to source resistance of 1.2R and a power dissipation of 220W. It is packaged in a rail/Tube package and is RoHS compliant.
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| Continuous Drain Current (ID) | 8.4A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.2R |
| Fall Time | 80ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 220W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 100ns |
| RoHS | Compliant |
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