The FQA8N80C is an N-channel MOSFET with a drain to source breakdown voltage of 800V and a continuous drain current of 8.4A. It has a maximum power dissipation of 220W and an operating temperature range of -55°C to 150°C. The device is lead free and RoHS compliant, packaged in a rail/Tube with 30 units per package.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi FQA8N80C datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Continuous Drain Current (ID) | 8.4A |
| Current Rating | 8.4A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.55R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.05nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 220W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 220W |
| Rds On Max | 1.55R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 65ns |
| DC Rated Voltage | 800V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQA8N80C to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
