The FQA8N80C_F109 is an N-channel MOSFET with a breakdown voltage of 800V and a continuous drain current of 8.4A. It has a maximum power dissipation of 220W and an operating temperature range of -55°C to 150°C. The device is packaged in a through-hole package and is compliant with RoHS regulations. The MOSFET has a drain to source resistance of 1.55R and a fall time of 70ns.
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| Continuous Drain Current (ID) | 8.4A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.55R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.05nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 220W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 220W |
| Rds On Max | 1.55R |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 65ns |
| RoHS | Compliant |
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