Onsemi
FQA8N90C-F109
Power MOSFET, N-Channel, QFET®, 900 V, 8.0 A, 1.9 Ω, TO-3P, TO-3PN 3L, 450-TUBE
MountingThrough Hole
PolarityN-CHANNEL
Power240W
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Technical Specifications
Onsemi FQA8N90C-F109 technical specifications.
General
| Continuous Drain Current (ID) | 8A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 1.9R |
| Drain to Source Voltage (Vdss) | 900V |
| Element Configuration | Single |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.08nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 240W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 240W |
| Radiation Hardening | No |
| Rds On Max | 1.9R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 40ns |
| Weight | 6.401g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQA8N90C-F109 Datasheet
Download the complete datasheet for Onsemi FQA8N90C-F109 to view detailed technical specifications.
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