Onsemi
FQA8N90C-F109
Power MOSFET, N-Channel, QFET®, 900 V, 8.0 A, 1.9 Ω, TO-3P, TO-3PN 3L, 450-TUBE
MountingThrough Hole
PolarityN-CHANNEL
Power240W
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Technical Specifications
Onsemi FQA8N90C-F109 technical specifications.
General
Continuous Drain Current (ID)
8A
Drain to Source Breakdown Voltage
900V
Drain to Source Resistance
1.9R
Drain to Source Voltage (Vdss)
900V
Element Configuration
Single
Fall Time
70ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
2.08nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
240W
Mount
Through Hole
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
240W
Radiation Hardening
No
Rds On Max
1.9R
RoHS Compliant
Yes
Series
QFET®
Turn-Off Delay Time
70ns
Turn-On Delay Time
40ns
Weight
6.401g
Compliance
RoHS
Compliant
Datasheet
Onsemi FQA8N90C-F109 Datasheet
Download the complete datasheet for Onsemi FQA8N90C-F109 to view detailed technical specifications.
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