N-Channel Power MOSFET featuring 80V drain-source breakdown voltage and a 90A continuous drain current. This single-element transistor boasts a low 16mΩ drain-source on-resistance and a maximum power dissipation of 214W. Designed for through-hole mounting in a TO-3P package, it operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 30ns turn-on delay and a 160ns fall time, with input capacitance at 3.25nF.
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| Continuous Drain Current (ID) | 90A |
| Current Rating | 90A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Resistance | 16mR |
| Drain to Source Voltage (Vdss) | 80V |
| Drain-source On Resistance-Max | 16MR |
| Element Configuration | Single |
| Fall Time | 160ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 23.8mm |
| Input Capacitance | 3.25nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 214W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 214W |
| Radiation Hardening | No |
| Rds On Max | 16mR |
| Resistance | 16MR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 30ns |
| DC Rated Voltage | 80V |
| Weight | 6.401g |
| RoHS | Compliant |
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