The FQA9N90 is a high-voltage N-channel MOSFET with a breakdown voltage of 900V and a continuous drain current of 8.6A. It has a drain to source resistance of 1.3R and can dissipate up to 240W of power. The device is available in a through-hole package and is RoHS compliant. The FQA9N90 operates over a temperature range of -55°C to 150°C and has a fall time of 80ns and turn-on and turn-off delay times of 45ns and 135ns, respectively.
MountingThrough Hole
PolarityN-CHANNEL
Power240W
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Technical Specifications
Onsemi FQA9N90 technical specifications.
General
| Continuous Drain Current (ID) | 8.6A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 1.3R |
| Fall Time | 80ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 240W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 135ns |
| Turn-On Delay Time | 45ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQA9N90 Datasheet
Download the complete datasheet for Onsemi FQA9N90 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.