The FQA9N90C is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a maximum power dissipation of 280W. It has a drain to source breakdown voltage of 900V and a continuous drain current of 9A. The device is packaged in a through-hole package and is lead-free. The FQA9N90C is RoHS compliant and has a maximum drain to source resistance of 1.4R.
Current Rating9A
MountingThrough Hole
PolarityN-CHANNEL
Power280W
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Technical Specifications
Onsemi FQA9N90C technical specifications.
General
| Continuous Drain Current (ID) | 9A |
| Current Rating | 9A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 900V |
| Fall Time | 75ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.73nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 280W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 280W |
| Rds On Max | 1.4R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 100ns |
| DC Rated Voltage | 900V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQA9N90C Datasheet
Download the complete datasheet for Onsemi FQA9N90C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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