N-Channel Power MOSFET, QFET® series, featuring 900V drain-to-source breakdown voltage and 9A continuous drain current. Offers 1.4Ω maximum drain-to-source resistance (Rds On) and 280W maximum power dissipation. Designed for through-hole mounting in a TO-3P/TO-3PN 3L package, with typical turn-on delay of 50ns and fall time of 75ns. Operates across a wide temperature range from -55°C to 150°C.
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| Continuous Drain Current (ID) | 9A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 900V |
| Element Configuration | Single |
| Fall Time | 75ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 18.9mm |
| Input Capacitance | 2.73nF |
| Length | 15.8mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 280W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 280W |
| Rds On Max | 1.4R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 100ns |
| Turn-On Delay Time | 50ns |
| Weight | 6.401g |
| Width | 5mm |
| RoHS | Compliant |
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