N-Channel Power MOSFET, QFET® series, featuring 900V drain-to-source breakdown voltage and 9A continuous drain current. Offers 1.4Ω maximum drain-to-source resistance (Rds On) and 280W maximum power dissipation. Designed for through-hole mounting in a TO-3P/TO-3PN 3L package, with typical turn-on delay of 50ns and fall time of 75ns. Operates across a wide temperature range from -55°C to 150°C.
MountingThrough Hole
PolarityN-CHANNEL
Power280W
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Technical Specifications
Onsemi FQA9N90C-F109 technical specifications.
General
Continuous Drain Current (ID)
9A
Drain to Source Breakdown Voltage
900V
Drain to Source Resistance
1.4R
Drain to Source Voltage (Vdss)
900V
Element Configuration
Single
Fall Time
75ns
Gate to Source Voltage (Vgs)
30V
Height
18.9mm
Input Capacitance
2.73nF
Length
15.8mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
280W
Mount
Through Hole
Number of Channels
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
280W
Rds On Max
1.4R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
QFET®
Threshold Voltage
5V
Turn-Off Delay Time
100ns
Turn-On Delay Time
50ns
Weight
6.401g
Width
5mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FQA9N90C-F109 Datasheet
Download the complete datasheet for Onsemi FQA9N90C-F109 to view detailed technical specifications.
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