P-channel MOSFET transistor with a 200V drain-source breakdown voltage and 8.6A continuous drain current. Features a low 470mΩ drain-to-source on-resistance and 70W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. Packaged in a 3-pin TO-3PF for through-hole mounting.
Current Rating-8.6A
MountingThrough Hole
PolarityP-CHANNEL
Power70W
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Technical Specifications
Onsemi FQAF12P20 technical specifications.
General
| Continuous Drain Current (ID) | 8.6A |
| Current Rating | -8.6A |
| Drain to Source Breakdown Voltage | -200V |
| Drain to Source Resistance | 470mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| Rds On Max | 470mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | -200V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQAF12P20 Datasheet
Download the complete datasheet for Onsemi FQAF12P20 to view detailed technical specifications.
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