The FQAF19N60 is a 600V N-CHANNEL MOSFET with a continuous drain current of 11.2A and a gate to source voltage of 30V. It features a drain to source breakdown voltage of 600V and a drain to source resistance of 380mR. The device is RoHS compliant and has a maximum operating temperature of 150°C. It is packaged in a through hole package and is available in quantities of 30.
Current Rating11.2A
MountingThrough Hole
PolarityN-CHANNEL
Power120W
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Technical Specifications
Onsemi FQAF19N60 technical specifications.
General
| Continuous Drain Current (ID) | 11.2A |
| Current Rating | 11.2A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 380mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 135ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 120W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 120W |
| Rds On Max | 380mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 150ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQAF19N60 Datasheet
Download the complete datasheet for Onsemi FQAF19N60 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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