The FQAF22P10 is a P-Channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 70W and a drain to source breakdown voltage of -100V. The device is lead free and RoHS compliant, packaged in a rail/Tube with 30 units per package. It has an input capacitance of 1.5nF and a gate to source voltage of 30V.
Current Rating-16.6A
MountingThrough Hole
PolarityP-CHANNEL
Power70W
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Technical Specifications
Onsemi FQAF22P10 technical specifications.
General
| Continuous Drain Current (ID) | 16.6A |
| Current Rating | -16.6A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 125mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 70W |
| Rds On Max | 125mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 60ns |
| DC Rated Voltage | -100V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQAF22P10 Datasheet
Download the complete datasheet for Onsemi FQAF22P10 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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