The FQAF85N06 is a N-CHANNEL MOSFET with a drain to source breakdown voltage of 60V and a continuous drain current of 67A. It has a drain to source resistance of 10mR and a power dissipation of 100W. The device is packaged in a rail/Tube format and is RoHS compliant. The FQAF85N06 operates over a temperature range of -55°C to 175°C.
PolarityN-CHANNEL
Power100W
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Technical Specifications
Onsemi FQAF85N06 technical specifications.
General
| Continuous Drain Current (ID) | 67A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 10mR |
| Fall Time | 170ns |
| Gate to Source Voltage (Vgs) | 25V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 175ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQAF85N06 Datasheet
Download the complete datasheet for Onsemi FQAF85N06 to view detailed technical specifications.
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