P-channel Power MOSFET featuring a -200V drain-source breakdown voltage and a continuous drain current of -11.5A. This surface-mount device offers a low drain-source on-resistance of 470mΩ at a nominal Vgs of 5V. Designed for efficient switching, it exhibits turn-on delay time of 20ns and fall time of 60ns. Packaged in a D2PAK for thermal performance, it operates across a wide temperature range of -55°C to 150°C.
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Onsemi FQB12P20TM technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 11.5A |
| Current Rating | -11.5A |
| Drain to Source Breakdown Voltage | -200V |
| Drain to Source Resistance | 470mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 470mR |
| Element Configuration | Single |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.83mm |
| Input Capacitance | 1.2nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.13W |
| Mount | Surface Mount |
| Nominal Vgs | 5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.13W |
| Radiation Hardening | No |
| Rds On Max | 470mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | -5V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | -200V |
| Weight | 1.31247g |
| Width | 9.65mm |
| RoHS | Compliant |
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