P-channel Power MOSFET featuring a -200V drain-source breakdown voltage and a continuous drain current of -11.5A. This surface-mount device offers a low drain-source on-resistance of 470mΩ at a nominal Vgs of 5V. Designed for efficient switching, it exhibits turn-on delay time of 20ns and fall time of 60ns. Packaged in a D2PAK for thermal performance, it operates across a wide temperature range of -55°C to 150°C.
PackageD2PAK
Current Rating-11.5A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQB12P20TM technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
11.5A
Current Rating
-11.5A
Drain to Source Breakdown Voltage
-200V
Drain to Source Resistance
470mR
Drain to Source Voltage (Vdss)
200V
Drain-source On Resistance-Max
470mR
Element Configuration
Single
Fall Time
60ns
Gate to Source Voltage (Vgs)
30V
Height
4.83mm
Input Capacitance
1.2nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.13W
Mount
Surface Mount
Nominal Vgs
5V
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
3.13W
Radiation Hardening
No
Rds On Max
470mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
QFET®
Threshold Voltage
-5V
Turn-Off Delay Time
40ns
Turn-On Delay Time
20ns
DC Rated Voltage
-200V
Weight
1.31247g
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FQB12P20TM Datasheet
Download the complete datasheet for Onsemi FQB12P20TM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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